NTE90 (NPN) & NTE91 (PNP) Silicon Complementary Transistors General Purpose High Gain Amplifier
Absolute Maximum Ratings: (TA = +25C) Collector-Emitter Voltage, VCEO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 120V Collector-Base Voltage, VCBO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 120V Emitter-Base Voltage, VEBO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5V Collector Current, IC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 50mA Collector Power Dissipation, PC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 750mW Operating Junction Temperature, TJ . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . +150C Storage Temperature Range, Tstg . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . -55 to +150C Electrical Characteristics: (TA = +25C unless otherwise specified)
Parameter Collector-Emitter Breakdown Voltage Collector-Base Breakdown Voltage Collector Cutoff Current DC Current Gain Base-Emitter Voltage Collector-Emitter Saturation Voltage Current Gain-Bandwidth Product Collector Output Capacitance Symbol Test Conditions Min 120 120 - 400 125 - - - - Typ Max Unit - - - - - - - 350 1.6 - - 0.5 800 - 0.75 0.2 - - V V MHz pF V V A V(BR)CEO IC = 1mA, RBE = V(BR)CBO IC = 10A, IE = 0 ICBO hFE1 hFE2 VBE VCE(sat) fT Cob VCB = 100V, IB = 0 VCE = 12V, IC = 2mA VCE = 12V, IC = 10mA VCE = 12V, IC = 2mA IC = 10mA, IB = 1mA VCE = 12V, IC = 5mA VCB = 25V, IE = 0, f = 1MHz
.339 (8.62) Max Seating Plane
.512 (13.0) Min
.026 (.66) Dia Max
ECB .100 (2.54)
.200 (5.08) Max
.240 (6.09) Max
|
